Solid-state imaging device and electronic apparatus

ABSTRACT

An solid-state imaging device includes a pixel region formed on a semiconductor substrate, an effective pixel region and a shielded optical black region in the pixel region, a multilayer wiring layer formed on a surface of the side opposite to a light incident side of the semiconductor substrate, a supporting substrate bonded to a surface of the multilayer wiring layer side, and an antireflection structure that is formed on the bonding surface side of the supporting substrate.

CROSS REFERENCES TO RELATED APPLICATIONS

This is a Continuation application of U.S. patent application Ser. No.13/317,469, filed Oct. 19, 2011, which in turn claims priority fromJapanese Application No.: 2010-254074, filed on Nov. 12, 2010, theentire contents of which are incorporated herein by reference.

BACKGROUND

The present disclosure relates to a solid-state imaging device, and anelectronic apparatus such as a camera including the solid-state imagingdevice.

As a solid-state imaging device (an image sensor), a CMOS solid-stateimaging device, a CCD solid-state imaging device and the like aresuggested. The solid-state imaging device is used in a digital stillcamera, a digital video camera, various types of portable terminalequipment such as a mobile phone including a camera, or the like. Inrecent years, accompanying miniaturization and lowered powerconsumption, a CMOS solid-state imaging device has been often used. Inaddition, a backside-illumination type of the CMOS solid-state imagingdevice has been developed in which a thinned semiconductor substrate isused, a pixel region including photodiodes in one surface (a lightsensing surface) side of the semiconductor substrate is formed, and amultilayer wiring layer including wirings in a plurality of layers isinstalled in the other surface side of the semiconductor substrateopposite to the pixel region.

In the backside-illumination type of the solid-state imaging device,since it is necessary to read and process a signal charge from the lightsensing surface side of the semiconductor substrate to a signalprocessing circuit which is formed in the surface side opposite to thelight sensing surface side, the thickness of the semiconductor substrateis thinned. Therefore, when light having a long wavelength such aninfrared light is incident, the light may be easily transmitted to themultilayer wiring layer side, and the light, which is reflected at asupporting silicon substrate surface bonded to the multilayer wiringlayer or at the wiring of the multilayer wiring layer, may be incidentto photodiodes of the adjacent pixels and color-mixed. In addition, theincident light may be incident to an optical black region whichdetermines a shielded optical black level disposed at the outside of aneffective pixel region of a pixel region, and a darkening problem whichrecognizes the pixel region as black in the state where the light isincident to the effective pixel region may occur.

As methods for suppressing color-mixing, the related arts are suggestedin Japanese Unexamined Patent Application Publication Nos. 2009-259934,2005-217439, and 2009-158944. In Japanese Unexamined Patent ApplicationPublication No. 2009-259934, by installing an infrared ray cut filterfilm or a light shield film between the photodiode and the wiring layer,the infrared light which is transmitted to the light sensing surface andreflected at the wiring layer is cut, and color-mixing is prevented.

In Japanese Unexamined Patent Application Publication No. 2005-217439,in a process for manufacturing the backside-illumination type of theCMOS solid-state imaging device, a silicide film which is used in a gateelectrode of a MOS transistor or an active region also remains in thephotodiode region (the side opposite to the light sensing region).Thereby, the light which is incident from the rear surface istransmitted to the photodiode and reflected at the wiring, and theseparated photodiode is prevented from being subjected to aphotoelectric conversion.

In a solid-state imaging device disclosed in Japanese Unexamined PatentApplication Publication No. 2009-158944, a layer wiring is formed, andan inner-optical filter layer cutting an infrared ray is formed in thelower layer of a color filter at the upper layer of an inner-layer lens.Thereby, sensitivity is improved and occurrence of color-mixing issuppressed.

Japanese Unexamined Patent Application Publication No. 2008-91753discloses a device which simultaneously and independently obtains acolor image and an infrared image using a single image sensor.

SUMMARY

FIG. 7 illustrates an example of a backside-illumination type of a CMOSsolid-state imaging device in the related art. The solid-state imagingdevice 101 includes a pixel region 104 in which a plurality of pixels103 constituted by photodiodes PD and a plurality of pixel transistorsTr in a thinned silicon semiconductor substrate 102 is two-dimensionallyarranged. The photodiodes PD are formed along the depth direction fromone surface which becomes the side of a light sensing surface of thesemiconductor substrate 102. A plurality of the pixel transistors Tr isformed on the other surface which is the side opposite to the lightsensing surface side of the semiconductor substrate 102. In FIG. 7, aplurality of the pixel transistors is represented by a transfertransistor (a MOS transistor) Tr including a single gate electrode 105schematically illustrated. A multilayer wiring layer 108, in whichwirings 107 in a plurality of layers are disposed via an interlayerinsulating film 106, is formed on the other surface of the semiconductorsubstrate 102.

For example, the wirings 107 are constituted by a copper wiring and abarrier metal layer which are formed by a damascene process. A barriermetal layer 109 is formed on the wirings 107 of each layer. A lightshield film 112 is formed on one surface of the light sensing surfaceside of the semiconductor substrate 102 via an insulating film 111. Thelight shield film 112 is formed while excluding the photodiodes PD in aneffective pixel region 113. In addition, the light shield film 112 isformed so as to shield the entire surface of the pixel in the opticalblack region 114. Moreover, a color filter 116 and an on-chip lens 117are formed via a planarized film 115.

On the other hand, the semiconductor substrate 102 in which themultilayer wiring layer 108 is formed is bonded to a supporting siliconsubstrate 121. In this case, a silicon nitride film 118 is formed on thesurface of the multilayer wiring layer 108, and a silicon oxide film 119is formed on the silicon nitride film 118. A silicon oxide film 124 isformed on the supporting substrate 121 via a silicon oxide film 122 anda silicon nitride film 123. In addition, for example, the silicon oxidefilm 119 on the surface of the multilayer wiring layer 108 side and thesilicon oxide film 123 on the surface of the supporting substrate 121are bonded by a plasma bonding method. A reference number 110 indicatesan adhering surface, that is, a bonding surface.

In the backside-illumination type of the solid-state imaging device,there are concerns that a darkening problem may occur due toinfiltration of light in the shielded optical black region 114 and acolor-mixing may occur due to the infiltration of the light from otherpixels to the effective pixel region 113. The present inventorsvalidated through simulation with respect to the occurrence of thedarkening and color-mixing. As a result, the present inventors provedthat propagation of incident light L passing through the photodiodes PDdominated at layers which are lower than an interlayer insulating film26. In addition, considering light reflections at interfaces havingrefractive index differences, it is considered that the light reflectionat the interface between the silicon of the supporting substrate 121having great refractive index difference and the insulating filmthereon, for example the silicon oxide film 122 is the most dominant.

Japanese Unexamined Patent Application Publication Nos. 2009-259934,2005-217439, and 2009-158944 describe technologies for solvingcolor-mixing. However, the infiltration of light is influenced byleakage from various portions, and the darkening problem is difficult tobe solved. The infrared ray cut filter film or the light shield film isformed between the photodiode and the wiring layer in JapaneseUnexamined Patent Application Publication No. 2009-259934, between thesilicon active layer and the wiring layer in Japanese Unexamined PatentApplication Publication No. 2005-217439, between the color filter andthe inner-layer lens in Japanese Unexamined Patent ApplicationPublication No. 2009-158944, and between the wiring layer and theinner-layer lens in Japanese Unexamined Patent Application PublicationNo. 2008-91753 respectively. In view of the relationship of theformation position, the infrared ray cut filter film or the light shieldfilm has a limitation in the thickness because the films is difficult tobe thickly formed, and the films are difficult to manufacture so as tohave a three-dimensional structure such as a moth-eye structure. Inaddition, the films may not prevent the infiltration of the light withrespect to an intense light.

In Japanese Unexamined Patent Application Publication No. 2009-259934,since the light shield film demands an electric insulation, processingdamage occurs or number of process is increased. In Japanese UnexaminedPatent Application Publication No. 2005-217439, the silicide film can becovered over the entire surface of the pixel portion. However, the filmmay not prevent the infiltration of the light with respect to an intenselight due to the thin film thickness. In addition, if the interlayerinsulating film of the multilayer wiring layer is formed of materialshaving a high refractive index which is a high dielectric, damage suchas RC delay of the wiring may occur.

It is desirable to provide a solid-state imaging device capable ofsuppressing the infiltration of light into an optical black region undera light shield film and occurrence of color-mixing in an effective pixelportion.

In addition, it is desirable to provide an electronic apparatus such asa camera including the solid-state imaging device.

According to an embodiment of the present disclosure, there is provideda solid-state imaging device including: a pixel region formed on asemiconductor substrate; and an effective pixel region and a shieldedoptical black region in the pixel region. In addition, the solid-stateimaging devices includes a multilayer wiring layer formed on a surfaceof the side opposite to a light incident side of the semiconductorsubstrate, a supporting substrate bonded to a surface of the multilayerwiring layer side, and an antireflection structure formed on the bondingsurface side of the supporting substrate.

In the solid-state imaging device of the embodiment of the presentdisclosure, since the antireflection structure is provided to thebonding surface side of the supporting substrate, the light reflectionis suppressed at the interface of the supporting substrate of thebonding surface side. Since the light reflection is suppressed at theinterface in which the light propagation is dominant, the infiltrationof light into the optical black region shielded and the infiltration oflight from the effective pixel region to other pixels are suppressed.

According to another embodiment of the present disclosure, there isprovided an electronic apparatus including: a solid-state imagingdevice; an optical system that introduces incident light to aphotoelectric conversion portion of the solid-state imaging device; anda signal processing circuit that processes an output signal of thesolid-state imaging device.

The solid-state imaging device includes a pixel region formed on asemiconductor substrate and an effective pixel region and a shieldedoptical black region and an effective pixel region. In addition, thesolid-state imaging devices includes a multilayer wiring layer formed ona surface of the side opposite to a light incident side of thesemiconductor substrate, a supporting substrate bonded to the surface ofthe multilayer wiring layer side, and an antireflection structure formedin the vicinity of the bonding surface of the supporting substrate.

In the electronic apparatus of the embodiment of the present disclosure,since the antireflection structure is provided to the bonding surfaceside of the supporting substrate in the solid-state imaging device, thelight reflection is suppressed at the interface of the supportingsubstrate of the bonding surface side. In addition, since the lightreflection is suppressed at the interface in which the light propagationis dominant, the infiltration of light into the optical black regionshielded and the infiltration of light from the effective pixel regionto other pixels are suppressed.

According to the solid-state imaging device of the embodiment of thepresent disclosure, since the infiltration of light into the shieldedoptical black region is suppressed, the optical black level can bedetermined so as to be stable. The darkening problem is improved.Moreover, since the infiltration of light from the effective pixelregion to other pixels is suppressed, occurrence of color-mixing can besuppressed.

According to the electronic apparatus of the embodiment of the presentdisclosure, since the optical black level can be determined so as to bestable and the occurrence of color-mixing can be suppressed in asolid-state imaging device, the electronic apparatus such as a camerahaving a high image quality can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic configuration diagram illustrating an example of aCMOS solid-state imaging device which is applied to each embodiment ofthe present disclosure.

FIG. 2 is a schematic configuration diagram of a main portionillustrating a first embodiment of a solid-state imaging device of thepresent disclosure.

FIG. 3 is a schematic configuration diagram of a main portionillustrating a second embodiment of a solid-state imaging device of thepresent disclosure.

FIGS. 4A to 4C are process diagrams illustrating an example of amoth-eye structure and the bonding state according to the secondembodiment.

FIGS. 5A and 5B are process diagrams illustrating other example of amoth-eye structure and the bonding state according to the secondembodiment.

FIG. 6 is a schematic configuration diagram illustrating an example ofan electronic apparatus according to a third embodiment of the presentdisclosure.

FIG. 7 is a schematic configuration diagram illustrating a solid-stateimaging device according to an example of the related art.

DETAILED DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the present disclosure will be described. Inaddition, the description is performed by the following order.

1. Schematic Configuration Example of a COMS Solid-State Imaging Device

2. First Embodiment (Configuration Example of Solid-State ImagingDevice)

3. Second Embodiment (Configuration Example of Solid-State ImagingDevice)

4. Fourth Embodiment (Configuration Example of Electronic Apparatus)

1. Schematic Configuration Example of a CMOS Solid-State Imaging Device

FIG. 1 illustrates a schematic configuration of an example of a CMOSsolid-state imaging device which is applied to each embodiment of thepresent disclosure. As illustrated in FIG. 1, a solid-state imagingdevice 1 of the present embodiment is constituted so as to include apixel region (a so-called imaging region) 3 in which a plurality ofpixels 2 including a photoelectric conversion portion is regularlyarranged in the form of two-dimensional array on a semiconductorsubstrate, for example, a silicon substrate, and a periphery circuitportion. As the pixel 2, a unit pixel constituted by singlephotoelectric conversion portion and a plurality of pixel transistorscan be applied. In addition, as the pixel 2, a so-called pixel sharingstructure, in which a plurality of the photoelectric conversion portionsshare other pixel transistors excluding a transfer transistor, can beapplied. A plurality of pixel transistors can be constituted by fourtransistors including the transfer transistor, a reset transistor, anamplification transistor, and a selection transistor, or by threetransistors including the three transistors with the selectiontransistor omitted.

The periphery circuit portion is constituted so as to include so-calledlogic circuits such as a vertical driving circuit 4, a column signalprocessing circuit 5, a horizontal driving circuit 6, an output circuit7, a control circuit 8, or the like.

The control circuit 8 receives data which commands an input clock, anoperation mode, or the like, and outputs data such as an internalinformation of the solid-state imaging device. That is, the controlcircuit 8 generates a clock signal or a control signal and the likewhich are references of operations of the vertical driving circuit 4,the column signal processing circuit 5, and the horizontal drivingcircuit 6 or the like based on a vertical synchronizing signal, ahorizontal synchronizing signal, and a master clock. In addition, thosesignals are input to the vertical driving circuit 4, the column signalprocessing circuit 5, the horizontal driving circuit 6, or the like.

For example, the vertical driving circuit 4 is constituted by shiftregisters and selects a pixel driving wiring. Further, the verticaldriving circuit 4 supplies a pulse for driving the pixel to the selectedpixel driving wiring and drives the pixel by a row unit. That is, thevertical driving circuit 4 selectively scans each pixel 2 of the pixelregion 3 by a row unit in a sequentially vertical direction. Inaddition, the vertical driving circuit 4 supplies a pixel signal basedon a signal charge to a column signal processing circuit 5 via avertical signal line 9, and the signal charge is generated according tothe amount of light received in, for example, a photodiode constitutinga photoelectric conversion element of each pixel 2.

For example, the column signal processing circuit 5 is disposed at everycolumn of the pixels 2, and performs signal processing such as noiseremoval of the signal output from the pixels 2 for one row at everypixel column. That is, the column signal processing circuit 5 performssignal processing such as CDS, signal amplification, AD conversion forremoving specific fixed pattern noise of the pixel 2. A horizontalselection switch (not illustrated) is connected and installed betweenthe column signal processing circuit and a horizontal signal line 10 inthe output end of the column signal processing circuit 5.

For example, the horizontal drive circuit 6 is constituted by shiftregisters, sequentially selects each column signal processing circuit 5by sequentially outputting a horizontal scan pulse, and outputs thepixel signal from each column signal processing circuit 5 to thehorizontal signal line 10.

The output circuit 7 performs signal processing with respect to thesignal which is sequentially supplied through the horizontal signal line10 from each column signal processing circuit 5 and outputs theprocessed signal. For example, in the signal processing, only bufferingmay be performed, or a black level adjustment, a column deviationcorrection, and various digital signal processes, or the like may beperformed. An input-output terminal 12 performs a signal exchange withthe external portion.

2. First Embodiment Configuration Example of Solid-State Imaging Device

FIG. 2 illustrates a solid-state imaging device, that is, abackside-illumination type of a CMOS solid-state imaging deviceaccording to a first embodiment of the present disclosure. Thesolid-state imaging device 21 according to the first embodiment isconstituted so as to include a pixel region 24 in which a plurality ofpixels 23 constituted by photodiodes PD constituting the photoelectricconversion portion and a plurality of pixel transistors Tr in a thinnedsilicon semiconductor substrate, a silicon semiconductor substrate 22 inthe present embodiment is two-dimensionally arranged. The photodiodes PDare formed along the depth direction from one surface (the rear surface)which becomes the side of a light sensing surface of the semiconductorsubstrate 22. In the present embodiment, the photodiodes PD are formedover the entire region in the thickness direction of the semiconductorsubstrate 22. Although not illustrated, the photodiodes PD areconstituted so as to include a first conduction type, for example ann-type semiconductor region, which is used as both a photoelectricconversion and a charge storage, and a second conduction type, forexample a p-type semiconductor region, which is disposed on the surfaceand the rear surface of the first conduction type and used to suppressdark current.

A plurality of the pixel transistors Tr is formed on the other surface(the front surface) which is the side opposite to the light sensingsurface side of the semiconductor substrate 22. In FIG. 2, a pluralityof the pixel transistors is represented by the transfer transistor (aMOS transistor) Tr including single gate electrode 25 schematicallyillustrated. A multilayer wiring layer 28, in which wirings 27 in aplurality of layers are disposed via an interlayer insulating film 26,is formed on the other surface (the front surface) of the semiconductorsubstrate 22. For example, a silicon oxide film is used as theinterlayer insulating film 26. For example, the wirings 27 are formed bya copper wiring and a barrier metal layer which are formed by adamascene process. A barrier metal layer 29 is formed on the wirings 27of each layer.

A light shield film 31 is formed on one surface of the light sensingsurface side of the semiconductor substrate 22 via an insulating film 30which is formed of a silicon oxide film or the like. The light shieldfilm 31 is formed while excluding the photodiodes PD in an effectivepixel region 33. In addition, the light shield film 31 is formed so asto shield the entire surface of the pixel in the optical black region34. The shield film 31 is formed of a metal film. Moreover, a colorfilter 36 and an on-chip lens 37 are formed via a planarized film 35.

On the other hand, the semiconductor substrate 22 in which themultilayer wiring layer 28 is formed is bonded to a supporting substrate41. That is, the semiconductor substrate 22 and the supporting substrate41 are integrally bonded to each other. As the supporting substrate 41,preferably, a semiconductor substrate having the same property as thesemiconductor substrate 22 may be used, and in the present embodiment, asilicon substrate is used. As the supporting substrate 41, thesubstrates other than the semiconductor substrate may be used.Insulating films 42, 43, and 44 are laminated on the supportingsubstrate 41. As the insulating films 42 and 44, for example, a siliconoxide film is used. In addition, as the insulating film 43, for example,a silicon nitride film is used. Insulating films 45 and 46 are laminatedon the interlayer insulating film 26 which is the uppermost layer of themultilayer wiring layer 28. Here, for example, the interlayer insulatingfilm 26 is a silicon oxide film. As the insulating film 45, for example,a silicon nitride film is used. In addition, as the insulating film 46,for example, a silicon oxide film is used. Moreover, the insulating film46 formed of, for example, a silicon oxide film on the surface of thesemiconductor substrate 22 side and the insulating film 44 formed of,for example, a silicon oxide film on the surface side of the supportingsubstrate 41 are bonded to each other by a plasma bonding method, forexample. A reference number 40 indicates an adhering surface, that is, abonding surface.

In addition, in the present embodiment, particularly, a lightantireflection structure 51 is formed on the bonding surface side of thesupporting substrate 41. That is, a material film 47, which has anintermediate refractive index between the refractive index of thesupporting substrate 41 of the semiconductor and the refractive index ofthe insulating film 42 disposed on the supporting substrate 41, isformed between the supporting substrate 41 and the insulating film 42.Therefore, the light antireflection structure 51 is constituted by theinsulating film 42, the material film 47, and the surface of thesupporting substrate 41. The material film 47 may be formed of a filmhaving 2.0 to 3.5 in the refractive index. In the present embodiment,the material film 47, which has the intermediate refractive indexbetween the refractive index (3.5) of the silicon and the refractiveindex (1.4) of the silicon oxide film, is inserted between the siliconsurface of the supporting substrate 41 and the silicon oxide film whichis disposed right on the supporting substrate 41 and is the insulatingfilm 42, and therefore, the antireflection structure 51 is constituted.

For example, the material film 47 is formed of one which is selectedfrom SiN, TiO, ZnO, SnO, ZrO, Al₂O₃, AlN, or other materials, and thelike. It is preferable that a metal oxide film is used as the materialfilm 47. When a ZrO film (refractive index: 2.4) is used as the materialfilm 47, it is preferable since the refractive index difference betweenthe silicon of the supporting substrate 41 and the ZrO film isapproximately the same as the refractive index difference between theZrO film and the silicon oxide film 42.

When a silicon nitride film is used as the material film 42 instead ofthe silicon oxide film, the material film 47 is formed of one which isselected from TiO, ZnO, SnO, ZrO, Al₂O₃, or AlN.

According to the solid-state imaging device 21 of the first embodiment,since the light antireflection structure 51 is formed at the bondingsurface side of the supporting substrate 41, the reflection of incidentlight L is suppressed by the light antireflection structure 51. That is,in the related art, since the refractive index difference between thesilicon of the supporting substrate and the silicon oxide film disposedon the supporting substrate is great, the light reflection in theinterface between the supporting substrate of silicon and the siliconoxide film is great. On the other hand, in the present embodiment, therefractive index difference between the insulating film 42 formed of asilicon oxide film and the material film 47 is small in which theinsulating film 42 and the material film 47 constitute the lightantireflection structure 51, and the refractive index difference betweenthe supporting substrate 41 of the silicon and the material film 47 issmall. Since the refractive index differences are small, the lightreflection in the interface between the insulating film 42 and thematerial film 47 and the light reflection in the interface between thematerial film 47 and the supporting substrate 41 of the silicon aredecreased respectively. Accordingly, the infiltration of light into thepixel of the shielded optical black region 34 is suppressed, a darkeningproblem is improved, and an optical black level can be obtained so as tobe stable. Moreover, in the effective pixel region 33, the infiltrationof light into other pixels is suppressed, and occurrence of color-mixingcan be suppressed.

Since the material film 47 for making the refractive index differencesmall is formed at the bonding surface side of the supporting substrate41, the thickness of the material film 47 is not limited, and the filmthickness having a high freedom degree can be set. Accordingly, problemssuch as RC delay of the wiring 27 also do not occur.

3. Second Embodiment Configuration Example of Solid-State Imaging Device

FIG. 3 illustrates a solid-state imaging device, that is, abackside-illumination type of a CMOS solid-state imaging deviceaccording to a second embodiment of the present disclosure. Thesolid-state imaging device 61 according to the second embodiment isconstituted so as to include the pixel region 24 in which a plurality ofthe pixels 23 constituted by photodiodes PD constituting thephotoelectric conversion portion and a plurality of the pixeltransistors Tr in a thinned semiconductor substrate, the siliconsemiconductor substrate 22 in the present embodiment istwo-dimensionally arranged. The photodiodes PD are formed along thedepth direction from one surface (the rear surface) which becomes theside of the light sensing surface of the semiconductor substrate 22. Aplurality of the pixel transistors Tr is formed on the other surface(the front surface) which is the side opposite to the light sensingsurface side of the semiconductor substrate 22. The multilayer wiringlayer 28, in which the wirings 27 in a plurality of layers are disposedvia the interlayer insulating film 26, is formed on the other surface(the front surface) of the side opposite to the light sensing surfaceside of the semiconductor substrate 22.

The light shield film 31 is formed on one surface of the light sensingsurface side of the semiconductor substrate 22 via the insulating film30 which is formed of a silicon oxide film or the like. The light shieldfilm 31 is formed while excluding the photodiodes PD in the effectivepixel region 33. In addition, the light shield film 31 is formed so asto shield the entire surface of the pixel in the optical black region34. The shield film 31 is formed of a metal film. Moreover, the colorfilter 36 and the on-chip lens 37 are formed via a planarized film 35.

The semiconductor substrate 22 in which the multilayer wiring layer 28is formed is bonded to the supporting substrate 41 which is formed of,for example, a silicon as the surface for bonding the multilayer wiringlayer 28 side.

In the present embodiment, particularly, a light antireflectionstructure 62 constituted by a moth-eye structure is formed on thebonding surface side of the supporting substrate 41. For example, asillustrated in FIGS. 4A to 4C, in the moth-eye structure constitutingthe light antireflection structure 62, a plurality of fine convexportions 63 is arranged on the surface of, for example, the siliconsubstrate which is the supporting substrate 41. Therefore, entireconfiguration of the light antireflection structure 62 is constituted soas to form a fine concave-convex pattern (refer to FIG. 4A).

In FIGS. 4A to 4C, the surface of the moth-eye structure in the surfaceside of the supporting substrate 41 is planarized by the planarized film64. As the planarized film 64, for example, an organic film, a boronphosphorous silicate glass (BPSG) film, or the like may be used (referto FIG. 4B). The supporting substrate 41 and the semiconductor substrate22 including the multilayer wiring layer 28 are bonded due to the factthat the insulating film 46 of the surface of the multilayer wiringlayer 28 side and the planarized film 64 of the moth-eye structure areabutted and bonded to each other by the plasma bonding method (refer toFIG. 4C).

In addition, as illustrated in FIGS. 5A and 5B, without forming theplanarized film 64, the fine concave-convex patterned surface of themoth-eye structure may be directly abutted to the insulating film 46 ofthe surface of the multilayer wiring layer 28 side and may be bonded bythe plasma bonding method.

The moth-eye structure can be formed through a transfer forming by usinga stamper, a blasting processing by spraying minute particles, a processcombining a wet etching and a dry etching, or the like. The pitch of thefine convex portion 63 of the moth-eye structure may be about ½ or lessof the wavelength of an infrared light which is incident into the deepportion, and, for example, may be about 400 nm. The height of the fineconvex portion 63 may be about 1 μm to 2 μm. The fine convex portion 63is more preferable as the height is greater, but may be 2 to 4 in theaspect ratio.

Since the other configurations are similar to those described in thefirst embodiment, in FIG. 3, the same reference numbers are attached tothe portions corresponding to those of FIG. 2, and the duplicateddescriptions are omitted.

According the solid-state imaging device 61 of the second embodiment,since the light antireflection structure 62 constituted by the moth-eyestructure is formed at the bonding surface side of the supportingsubstrate 41, the reflection of the incident light L is suppressed bythe light antireflection structure 62. That is, since the fine convexportion 63 is constituted so as to arrange in the moth-eye structure,the refractive index is changed so as to be great continuously from thesurface of the moth-eye structure into the depth direction. Thereby, therefractive index difference is smaller as possible in the layer which isfrom the insulating film 42 to the surface of the supporting substrate41 of the silicon via the light reflection film 62 of the moth-eyestructure, and the light reflection is suppressed at the interface ofthe supporting substrate 41. Accordingly, the infiltration of light intothe pixel of the shielded optical black region 34 is suppressed, adarkening problem is improved, and an optical black level can be madestable and fixed. Moreover, in the effective pixel region 33, theinfiltration of light into other pixels is suppressed, and occurrence ofcolor-mixing can be suppressed.

Since the light antireflection structure 62 constituted by the moth-eyestructure is formed on the bonding surface side of the supportingsubstrate 41, the pitch of the moth-eye structure having athree-dimensional structure, the height, or the like can be set with ahigh freedom degree, and the light antireflection structure 62 can beformed over the entire surface of the supporting substrate 41.Accordingly, problems such as RC delay of the wiring 27 also do notoccur.

4. Third Embodiment Configuration Example of Electronic Apparatus

For example, the solid-state imaging devices of embodiments of theabove-described present disclosure can be applied to electronicapparatuses of a camera such as a digital camera or a video camera, or amobile phone having an imaging function, other apparatus having animaging function, or the like.

FIG. 6 illustrates a third embodiment which is applied to a camera as anexample of an electronic apparatus according to an embodiment of thepresent disclosure. The camera according to the present embodiment isexemplified to a video camera capable of performing photography of astatic image or a moving image. The camera 71 of the present embodimentincludes a solid-state imaging device 72, an optical systems 73 whichintroduces incident light into a received light sensing portion of thesolid-state imaging device 72, a shutter unit 74, a driving circuit 55which drives the solid-state imaging device 72, and a signal processingcircuit 76 which process an output signal of the solids-state imagingdevice 72.

Any one of the solid-state imaging devices of the above-describedembodiments is applied to the solid-state imaging device 72. The opticalsystem (optical lens) 73 images an image light (incident light) from asubject on the imaging surface of the solid-state imaging device 72.Thereby, the signal charge is stored in the solid-state imaging device72 for a predetermined interval. The optical system 73 may be an opticallens system which constituted by a plurality of optical lens. Theshutter unit 74 controls the light irradiation interval and the lightshield interval into the solid-state imaging device 72. The drivingcircuit 75 supplies the driving signal which controls the transferoperation of the solid-state imaging device 72 and the shutteringoperation of the shutter unit 74. The signal transfer of the solid-stateimaging device 72 is performed by the driving signal (timing signal)supplied from the driving circuit 75. The signal processing circuit 76performs various signal processes. The image signal which is subjectedto the signal processing is stored in a storage medium such as memory oroutput to a monitor.

According to electronic apparatus of the third embodiment, in thesolid-state image device, the infiltration of light into the pixel ofthe shielded optical black region is suppressed, and an optical blacklevel can be obtained so as to be stable. Moreover, in the effectivepixel region, the infiltration of light into other pixels is suppressed,and occurrence of color-mixing can be suppressed. Accordingly, theelectronic apparatus having high resolution can be provided. Forexample, a camera or the like having an improved image can be provided.

The present disclosure contains subject matter related to that disclosedin Japanese Priority Patent Application JP 2010-254074 filed in theJapan Patent Office on Nov. 12, 2010, the entire contents of which arehereby incorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A semiconductor device, comprising: a circuitregion formed on a semiconductor substrate having an upper surface sideand a lower surface side; a multilayer wiring layer formed closer to theupper surface side than to the lower surface side of the semiconductorsubstrate; and a supporting substrate bonded to a surface of themultilayer wiring layer.
 2. The semiconductor device according to claim1, further comprising: an additional structure formed on the bondingsurface side of the supporting substrate.
 3. The semiconductor deviceaccording to claim 2, wherein the additional structure comprises: asurface of the supporting substrate; an insulating film of the surfaceside of the supporting substrate; and a film disposed between thesupporting substrate and the insulating film.
 4. The semiconductorsubstrate according to claim 3, further comprising: a planarized filmformed on the surface of the supporting substrate, wherein thesupporting substrate includes a silicon substrate, and the multilayerwiring layer and the supporting substrate are bonded to each otherbetween the planarized film and the multilayer wiring layer.
 5. Anelectronic apparatus comprising the semiconductor substrate according toclaim 1, and including: a solid-state imaging device; an optical systemthat introduces incident light to a photoelectric conversion portion ofthe solid-state imaging device; and a signal processing circuit thatprocesses an output signal of the solid-state imaging device.
 6. Theelectronic device according to claim 5, further comprising: anadditional structure formed on the bonding surface side of thesupporting substrate.
 7. The electronic device according to claim 6,wherein the additional structure comprises: a surface of the supportingsubstrate; an insulating film of the surface side of the supportingsubstrate; and a film disposed between the supporting substrate and theinsulating film.
 8. The electronic device according to claim 7, furthercomprising: a planarized film formed on the surface of the supportingsubstrate, wherein the supporting substrate includes a siliconsubstrate, and the multilayer wiring layer and the supporting substrateare bonded to each other between the planarized film and the multilayerwiring layer.